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Tag
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Ind1
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Ind2
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Isi
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LEADER
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00992cam a2200289 a 4500
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001
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INLIS000000000421493
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005
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20111212121254.54
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006
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aa###g#b###z00010#
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007
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ta
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008
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111212s2007####io#a###g#b###z00010#ind##
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035
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#
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#
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$a 0010-60697460
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040
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#
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#
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$a JKPNAPNA$b ind
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|
082
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#
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#
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$a 621.381
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090
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#
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#
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$a CB[G]-D.12 08-4940
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100
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0
|
#
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$a Sugianto
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245
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1
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0
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$a Fabrikasi struktur - hetero AlxGa1-xN/GaN dan aplikasinya pada heterostructure field effect transistor / $c oleh : Sugianto,Sunarno
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260
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#
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#
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$a $c 2008
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300
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#
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#
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$a 71, [13] [14] lembar, : $b Ilus, ; $c 29 cm.
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500
|
#
|
#
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$a Disetujui oleh Ketua Lembaga Penelitian UNNES,Universitas Negri (Semarang),2007
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|
504
|
#
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#
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$a Bibliografi : Termasuk
|
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600
|
#
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#
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$a Elektronika,Alat-alat -- Penelitian
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700
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0
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#
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$a Sugianto
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710
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1
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#
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$a Universitas Negri Semarang. $b Lembaga Penelitian
|
|
850
|
#
|
#
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$a JKPNPNA
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|
900
|
#
|
#
|
$a 00691nbm**2200012*a*4500
|
|
902
|
#
|
#
|
$a INDOLI38:12-DEC-11*
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|
999
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#
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#
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$a 4940/DM[G]/D/08
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